Research on GaN-Based RF Devices: High-Frequency Gate Structure Design, Submicrometer-Length Gate Fabrication, Suppressed SCE, Low Parasitic Resistance, Minimized Current Collapse, and Lower Gate Leakage
Yue Hao, Xiaohua Ma, Minhan Mi, Lin‐An Yang
Abstract
As an important part of wireless communication systems, the technology of RF devices and circuits has been progressing rapidly. For high-frequency and high-power applications, vacuum electronic devices (e.g., traveling wave tubes) have been widely used, although the vacuum tube is large in size and hard to integrate.
Topics & Concepts
FabricationOptoelectronicsParasitic elementElectronic circuitLeakage (economics)Materials scienceRadio frequencyElectrical engineeringWirelessVacuum tubeLogic gateElectronic engineeringEngineeringTelecommunicationsAlternative medicineMedicineMacroeconomicsEconomicsPathologyGaN-based semiconductor devices and materialsSemiconductor Quantum Structures and DevicesRadio Frequency Integrated Circuit Design