Highly Efficient Room‐Temperature Nonvolatile Magnetic Switching by Current in Fe<sub>3</sub>GaTe<sub>2</sub> Thin Flakes
Shaohua Yan, Shangjie Tian, Fu Yang, Fanyu Meng, Zhiteng Li, Hechang Lei, Shouguo Wang, Xiao Zhang
Abstract
Abstract Effectively tuning magnetic state by using current is essential for novel spintronic devices. Magnetic van der Waals (vdW) materials have shown superior properties for the applications of magnetic information storage based on the efficient spin torque effect. However, for most of known vdW ferromagnets, the ferromagnetic transition temperatures lower than room temperature strongly impede their applications and the room‐temperature vdW spintronic device with low energy consumption is still a long‐sought goal. Here, the highly efficient room‐temperature nonvolatile magnetic switching is realized by current in a single‐material device based on vdW ferromagnet Fe 3 GaTe 2 . Moreover, the switching current density and power dissipation are about 300 and 60000 times smaller than conventional spin‐orbit‐torque devices of magnet/heavy‐metal heterostructures. These findings make an important progress on the applications of magnetic vdW materials in the fields of spintronics and magnetic information storage.