First-principles study of vacancy defects at interfaces between monolayer MoS<sub>2</sub> and Au
Xiaoqian Qiu, Yiren Wang, Yong Jiang
Abstract
Energetically favorable S(hollow)-vacancy has lower contact resistance and higher electron injection efficiency, resulting in better electronic performance in defective Au–MoS<sub>2</sub> contact.
Topics & Concepts
Vacancy defectMonolayerMaterials scienceContact resistanceNanotechnologyCrystallographyChemical physicsChemistryLayer (electronics)2D Materials and ApplicationsMXene and MAX Phase MaterialsChalcogenide Semiconductor Thin Films