Up to 300 K lasing with GeSn-On-Insulator microdisk resonators
A. Bjelajac, M. Gromovyi, E. Sakat, B. Wang, G. Patriarche, N. Pauc, V. Calvo, P. Boucaud, F. Boeuf, A. Chelnokov, V. Reboud, M. Frauenrath, J.-M. Hartmann, M. El Kurdi
Abstract
GeSn alloys are the most promising direct band gap semiconductors to demonstrate full CMOS-compatible laser integration with a manufacturing from Group-IV materials. Here, we show that room temperature lasing, up to 300 K, can be obtained with GeSn. This is achieved in microdisk resonators fabricated on a GeSn-On-Insulator platform by combining strain engineering with a thick layer of high Sn content GeSn.
Topics & Concepts
Materials scienceLasing thresholdResonatorOptoelectronicsOpticsLaserSemiconductor laser theorySemiconductorQ factorLayer (electronics)Refractive indexWhispering-gallery waveBand gapFabricationStrain (injury)Integrated opticsOptical cavityGallium arsenideElectron-beam lithographyWide-bandgap semiconductorReflectivityPhotonic and Optical DevicesMechanical and Optical ResonatorsAdvanced Fiber Optic Sensors