Self‐Powered Broadband UV–NIR Photodetectors Based on InSe/PtS<sub>2</sub> Van der Waals Heterostructure
Zhengyu Xu, Qinggang Qin, Xiaofei Ma, Jiawang Chen, Xue Liu, Wei Chen, Zhifan Qiu, Lin Wu, Wenshuai Gao, Liang Li
Abstract
Abstract Van der Waals heterostructures (vdWHs) consisting of 2D materials offer a practical and effective approach for engineering multifunctional, high‐performance photodetectors. However, 2D vdWHs photodetectors based on photoconductive effects require an external power input and are often accompanied by a large dark current, which hinders the development of miniaturization and portability of devices and greatly limits the application of devices in complex environments. Herein, a self‐powered photodetector constructed from an InSe/PtS 2 vdWH with an extremely low dark current (≈10 −14 A) at zero bias and a large rectification ratio of 5.1 × 10 3 is reported. Leveraging the robust built‐in electric field of the InSe/PtS 2 vdWH, the device demonstrates pronounced photovoltaic effects, characterized by an open‐circuit voltage of 0.395 V and a substantial short‐circuit current of 37.1 nA. Remarkably, a high responsivity and detectivity of 211 mA W −1 and 8.58 × 10 12 Jones, an excellent light on/off ratio of 0.8 × 10 7 , and a fast response time of 465/470 µs are achieved, at zero bias. The device showcases a broadband self‐powered photoresponse spanning from 265 to 1064 nm. This study demonstrates the high potential of the InSe/PtS 2 vdWH for broadband self‐powered photodetector applications.