Contact properties of a low-resistance aluminum-based electrode with metal capping layers in vertical oxide thin-film transistors
Sori Jeon, Kwang‐Heum Lee, Seung Hee Lee, Seong‐In Cho, Chi‐Sun Hwang, Jong Beom Ko, Sang‐Hee Ko Park
Abstract
Vertical thin-film transistors (TFTs) with low contact resistance are necessary to realize high-resolution displays for virtual reality and augmented reality applications.
Topics & Concepts
Materials scienceElectrodeOxideAluminiumContact resistanceMetalThin-film transistorAluminum oxideOptoelectronicsTransistorComposite materialLayer (electronics)MetallurgyElectrical engineeringVoltageEngineeringPhysical chemistryChemistryThin-Film Transistor TechnologiesNanowire Synthesis and ApplicationsZnO doping and properties