Reaction Mechanisms during Atomic Layer Deposition of AlF<sub>3</sub> Using Al(CH<sub>3</sub>)<sub>3</sub> and SF<sub>6</sub> Plasma
Martijn F. J. Vos, Harm C. M. Knoops, W. M. M. Kessels, Adriaan J. M. Mackus
Abstract
growth can help in developing ALD processes for other metal fluorides using a fluorine-containing plasma as the co-reactant as well as atomic layer etching (ALE) processes involving surface fluorination.
Topics & Concepts
Atomic layer depositionChemistryRadicalInfrared spectroscopySpectroscopyAnalytical Chemistry (journal)Deposition (geology)FluorineInfraredMetalInorganic chemistryLayer (electronics)Organic chemistryBiologyQuantum mechanicsPhysicsOpticsSedimentPaleontologySemiconductor materials and devicesPlasma Diagnostics and ApplicationsZnO doping and properties