Fractional Chern insulator states in multilayer graphene moiré superlattices
Zhongqing Guo, Xin Lü, Bo Xie, Jianpeng Liu
Abstract
As the zero-field analogue of the fractional quantum Hall states, fractional Chern insulator states emerge from topologically nontrivial flat bands realized in lattice systems. Recently, a series of fractionally quantized Hall resistance plateaus have been observed in rhombohedral pentalayer graphene-hBN moir\'e superlattices under zero magnetic field, needing theoretical understanding. The authors have developed a theoretical workflow, discovering both integer and fractional Chern insulator states in rhombohedral multilayer graphene-hBN moir\'e superlattices, which are consistent with recent experimental results.
Topics & Concepts
SuperlatticeCondensed matter physicsQuantum Hall effectPhysicsInsulator (electricity)GrapheneFractional quantum Hall effectMagnetic fieldLattice (music)Quantum mechanicsTheoretical physicsQuantum spin Hall effectAcousticsOptoelectronicsQuantum and electron transport phenomenaGraphene research and applicationsTopological Materials and Phenomena