Single photon emission from droplet epitaxial quantum dots in the standard telecom window around a wavelength of 1.55 μm
Neul Ha, Takaaki Mano, Samuel Dubos, Takashi Kuroda, Yoshiki Sakuma, Kazuaki Sakoda
Abstract
Abstract We study the luminescence dynamics of telecom wavelength InAs quantum dots grown on InP(111)A by droplet epitaxy. The use of the ternary alloy InAlGaAs as a barrier material leads to photon emission in the 1.55 μ m telecom C-band. The luminescence decay is well described in terms of the theoretical interband transition strength without the impact of nonradiative recombination. The intensity autocorrelation function shows clear anti-bunching photon statistics. The results suggest that our quantum dots are useful for constructing a practical source of single photons and quantum entangled photon pairs.
Topics & Concepts
Quantum dotPhotonWavelengthLuminescenceOptoelectronicsPhysicsSingle-photon sourceAutocorrelationMaterials sciencePhotoluminescenceTernary operationQuantumPhoton entanglementQuantum information scienceIntensity (physics)EpitaxyTernary alloyLight-emitting diodeOpticsQuantum opticsTwo-photon excitation microscopyTelecom infrastructure sharingWindow (computing)Spontaneous parametric down-conversionSemiconductor Quantum Structures and DevicesNear-Field Optical MicroscopySemiconductor Lasers and Optical Devices