Litcius/Paper detail

Influence of GaN/ZrO2 interfacial layer defects on 8-nm GaN-SOI-FinFET for reliable RFIC design

Neha Gupta, Ajay Kumar

2021AEU - International Journal of Electronics and Communications11 citationsDOI

Topics & Concepts

TransconductanceMaterials scienceOptoelectronicsSilicon on insulatorGallium nitrideThreshold voltageReliability (semiconductor)IntermodulationLinearityNitrideTransistorElectrical engineeringLayer (electronics)VoltagePower (physics)SiliconCMOSNanotechnologyEngineeringPhysicsQuantum mechanicsAmplifierSemiconductor materials and devicesAdvancements in Semiconductor Devices and Circuit DesignGaN-based semiconductor devices and materials
Influence of GaN/ZrO2 interfacial layer defects on 8-nm GaN-SOI-FinFET for reliable RFIC design | Litcius