Evolution of reverse recovery in trench MOSFETs
Alessandro Ferrara, Ralf Siemieniec, U. Medic, Michael Hutzler, Oliver Blank, T. Henson
Abstract
The interaction between the reverse recovery charge and the output charge in trench power MOSFETs is discussed. As the trade-off between the on-resistance and the gate charge improves, the output capacitance has more impact on the reverse recovery losses. The evolution of reverse recovery with trench technology is investigated by double-pulse measurements and TCAD simulations.
Topics & Concepts
TrenchPower MOSFETCapacitanceMaterials scienceCharge (physics)OptoelectronicsMOSFETDiffusion capacitanceElectrical engineeringVoltagePhysicsTransistorEngineeringElectrodeNanotechnologyLayer (electronics)Quantum mechanicsSilicon Carbide Semiconductor TechnologiesSemiconductor materials and devicesAdvancements in Semiconductor Devices and Circuit Design