Current Transport Mechanism of High-Performance Novel GaN MIS Diode
Tao Zhang, Yanni Zhang, Jincheng Zhang, Xiangdong Li, Yueguang Lv, Yue Hao
Abstract
In this work, we report a high-performance lateral GaN metal-insulator-semiconductor (MIS) diode with a low turn-on voltage (V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</sub> ) of 0.32 V. Both in-depth theoretical calculations on current transport mechanisms and a forward conduction model are demonstrated. Based on the calculation results, the direct tunneling (DT) and thermionic emission (TE) coexist as the forward conduction mechanism, contributing to this low subthreshold swing (SS). Furthermore, a 1.8 nm thick Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> interlayer increases the equivalent Schottky barrier height ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\Phi _{\text {B}}$ </tex-math></inline-formula> ) which effectively suppresses the reverse leakage to <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$4.5\times 10^{-{4}}$ </tex-math></inline-formula> mA/mm at room temperature.