Electroforming-free threshold switching of NbO<sub><i>x</i></sub>–based selector devices by controlling conducting phases in the NbO<sub><i>x</i></sub> layer for the application to crossbar array architectures
Kitae Park, Jiyeon Ryu, Dwipak Prasad Sahu, Hyun-Mi Kim, Tae‐Sik Yoon
Abstract
A NbO x layer features forming-free bipolar threshold switching for the application to selector devices in crossbar array architectures through controlling conducting phases in the layer by precise deposition and interaction with a niobium electrode.
Topics & Concepts
ElectroformingNatural bond orbitalMaterials scienceElectrodeAnnealing (glass)Threshold voltageAnalytical Chemistry (journal)OptoelectronicsLayer (electronics)VoltageNanotechnologyChemistryMetallurgyPhysical chemistryElectrical engineeringComputational chemistryDensity functional theoryChromatographyTransistorEngineeringAdvanced Memory and Neural ComputingTransition Metal Oxide NanomaterialsFerroelectric and Negative Capacitance Devices