High Performance 1.3 µm III–V Quantum Dot Lasers Grown on Silicon via all MOCVD Epitaxy
Honghwi Park, Seung‐Chul Lee, Won Seok Han, Daehwan Jung, HoSung Kim
Abstract
Abstract Epitaxial growth of III‐V light sources onto silicon (Si) platforms is technologically important for numerous applications in photonics. High‐performance quantum dot (QD) lasers on Si have been carried out using molecular beam epitaxy systems because they can permit precise epitaxy control for sophisticated III–V QD growth and low epitaxy temperatures. Although the metal‐organic chemical vapor deposition system (MOCVD) is the choice of the III–V optoelectronics industry and more advantageous for Si photonic platform integrations, no high‐performance, reliable III–V lasers epitaxially integrated onto Si have been demonstrated using MOCVD. Here, all‐MOCVD‐grown III–V QD lasers on Si with a threshold current density of 255 A cm −2 are shown, lasing up to 115 °C, and extrapolated device lifetimes exceeding 20 years when aged at 55 °C. These impressive results are achieved by solving two critical issues, which are the growth of high‐quality QDs and two‐step p ‐Al 0.4 Ga 0.6 As cladding growth without free carrier absorption. This work paves the way for commercializing Si photonics integrated with efficient and reliable III‐V on‐chip light sources in a scalable fashion.