Development of High-Voltage Vertical GaN PN Diodes
Robert Kaplar, Brendan Gunning, Andrew A. Allerman, Mary H. Crawford, Jack Flicker, Andrew Armstrong, Luke Yates, Andrew Binder, Jeramy Ray Dickerson, Gregory Pickrell, Paul Sharps, Travis J. Anderson, James C. Gallagher, Alan G. Jacobs, Andrew D. Koehler, Marko J. Tadjer, Karl D. Hobart, Mona A. Ebrish, Matthew Porter, Rafael Perez Martinez, Ke Zeng, Dong Ji, Srabanti Chowdhury, Özgür Aktaş, James A. Cooper
Abstract
This paper describes the development of vertical GaN PN diodes for high-voltage applications. A centerpiece of this work is the creation of a foundry effort that incorporates epitaxial growth, wafer metrology, device design, processing, and characterization, and reliability evaluation and failure analysis. A parallel effort aims to develop very high voltage (up to 20 kV) GaN PN diodes for use as devices to protect the electric grid against electromagnetic pulses.