Formation of p-n<sup>+</sup>diamond homojunctions by shallow doping of phosphorus through liquid emersion excimer laser irradiation
Eslam Abubakr, Shinya Ohmagari, Abdelrahman Zkria, Hiroshi Ikenoue, Julien Pernot, Tsuyoshi Yoshitake
Abstract
We report the fabrication of p-n+ diamond homojunction through an innovative approach of laser irradiation in liquid-ambient. A shallow phosphorus-doped layer with a high electric conductivity is processed on top of a p-type diamond substrate to form the p-n+ homojunction. The current–voltage measurements at room temperature confirmed high conductivity of the induced n+ layer and showed exceptional rectification properties with an ideality factor of 1.07, excellent low on-resistance of 3.7 × 10−2 Ωcm2, and current density over 260 Acm−2 at forward-biasing of 10 V. Furthermore, undetectable leakage-current provides a rectification ratio exceeding 1010 at ±6 V, promoting the junction in UV detection applications.