Detection of negatively ionized air by using a Raman silicon nanocavity laser
Satoshi Yasuda, Yuki Takahashi, Takashi Asano, Yuki Saito, Kazuya Kikunaga, Daiki Yamashita, Susumu Noda, Yasushi Takahashi
Abstract
The performance of a Raman silicon laser based on a high quality-factor nanocavity depends on the degree of free-carrier absorption, and this characteristic may be useful for certain applications. Here we demonstrate that laser oscillation in a Raman silicon nanocavity laser stops abruptly after an exposure to a weak flux of negatively ionized air for a few seconds. Spectral measurements reveal that the laser interruption is mainly caused by the transfer of extra electrons from the negatively ionized air molecules to the silicon nanocavity. These electrons affect the efficiency of the Raman laser by free carrier absorption. We find that the laser output gradually recovers as the extra electrons escape from the nanocavity and confirm that such a detection of ionized air is repeatable. These results show that a Raman silicon nanocavity laser can be used for the detection of ionized air with a high spatial resolution.