Artificial Vision Adaption Mimicked by an Optoelectrical In<sub>2</sub>O<sub>3</sub> Transistor Array
Chenxing Jin, Wanrong Liu, Yunchao Xu, Yulong Huang, Yiling Nie, Xiaofang Shi, Gengming Zhang, Pei He, Jian Zhang, Hongtao Cao, Jia Sun, Junliang Yang
Abstract
transistor array with a negative photoconductivity behavior is designed using a side-gate structure and a screen-printed ion-gel as the gate insulator. This paper is the first to observe a negative photoconductivity in electrolyte-gated oxide devices. Furthermore, an artificial visual perception system capable of self-adapting to environmental lightness is mimicked using the proposed device array. The transistor device array shows a self-adaptive behavior of light under different levels of light intensity, successfully demonstrating the visual adaption with an adjustable threshold range to the external environment. This study provides a new way to create an environmentally adaptive artificial visual perception system and has far-reaching significance for the future of neuromorphic electronics.