Self-rectifying resistive switching in MAPbI3-based memristor device
Phu‐Quan Pham, Truc-Quyen Thi Vo, Duy Khanh Le, Chuong Thanh Huynh, Tung Thanh Ngo, Phuong Tuyet Nguyen, Anh Tuấn Thanh Phạm, Nam Hoang Vu, Thang Bach Phan, Yoshiyuki Kawazoe, Ngoc Kim Pham
Abstract
A critical stage in developing high-density memristors is addressing the sneak current within the crossbar architecture. One of the effective strategies to endow the memristive cell with the ability to prevent sneak currents when it is in a low resistance state is to give it an inherent diode, known as a self-rectifying memristive cell. This study demonstrates the Schottky diode inside the MAPbI3-based memristive cell, a consequence of its interaction with the tungsten (W) electrode. The performance of memory devices is reliable with low-voltage operation, a resistance window having over ten of magnitude, and the retention time remains over 104 s. Prominently, the self-rectifying behavior is sustainable over 150 cycles and exhibits a rectification ratio of approximately 102 times. Density functional theory calculation reveals the presence of unoccupied gap states on an interfaced MAPbI3 surface, serving as electron trapping states during the charge transport across the W/MAPbI3 Schottky interface. Consequently, the conduction mechanism is primarily governed by an interfacial-controlled model, notably Schottky emission. This improvement promises to eliminate sneak currents in future crossbar array fabrication.