Highly efficient lead zirconate titanate ring modulator
Guolei Liu, YU Hong-yan, Dasai Ban, B. Li, Wei Guo-qiang, Yang Chen, Jungan Wang, Young-Ik Sohn, Yu Han, Feng Qiu
Abstract
Advanced photonic integrated circuits require large-scale integration of high-speed electro-optic (EO) functional components on a chip. Low power consumption and high operation speed are thus key metrics for almost all integrated EO devices. Here, we demonstrated a ring resonator modulator based on lead zirconate titanate (PZT) on a SiO2/Si substrate. The ridge waveguides were employed to keep a large spatial overlap between the optical field and the electric field within the PZT layer. The device exhibits a data rate of 56 Gbit/s and significant tuning efficiency, reaching up to 35.8 pm/V, corresponding to 1.17 V·cm. The demonstration of energy efficient and high-speed EO modulation paves the way for realizing dense PZT photonics integrated circuits.