Band-Gap Landscape Engineering in Large-Scale 2D Semiconductor van der Waals Heterostructures
Victor Zatko, Simon M.‐M. Dubois, Florian Godel, Cécile Carrétéro, Anke Sander, Sophie Collin, Marta Galbiati, Julian Peiro, Federico Panciera, G. Patriarche, Pierre Brus, Bernard Servet, Jean‐Christophe Charlier, Marie‐Blandine Martin, Bruno Dlubak, Pierre Sénéor
Abstract
calculations in support. The flexibility of this direct growth approach, with multilayer stacks being built in a single run, allows for the definition of complex 2D heterostructures barely accessible with usual exfoliation or transfer techniques of 2D materials. Reminiscent of the III-V semiconductors' successful exploitation, our approach unlocks virtually infinite combinations of large 2D material families in any complex van der Waals heterostructure design.
Topics & Concepts
HeterojunctionSemiconductorvan der Waals forceScale (ratio)Materials scienceBand gapCondensed matter physicsEngineering physicsNanotechnologyOptoelectronicsChemical physicsPhysicsQuantum mechanicsMolecule2D Materials and ApplicationsGraphene research and applicationsNanowire Synthesis and Applications