Anisotropic silicon nanowire arrays fabricated by colloidal lithography

Abstract

the deposition angle. Consecutive MACE using these patterned substrates with or without prior removal of the templating spheres results in arrays of anisotropic SiNWs with either elliptical or crescent-shaped cross-sections, respectively. As a consequence of the anisotropy, long SiNWs with elliptical cross-sections preferentially collapse along their short axis, leading to a controlled bundling process and the creation of anisotropic surface topographies. These results demonstrate that a rich library of SiNW shapes and mesostructures can be prepared using simple spherical colloidal particles as masks.

Topics & Concepts