Study on the effect of melt flow behavior on the uniformity of phosphorus doping during the growth of large-size n-type monocrystalline silicon by Czochralski method
Zhenling Huang, Liang Zhao, Tai Li, Jiaming Kang, Xiang Zhou, Shaoyuan Li, Wenhui Ma, Guoqiang Lv, Yongsheng Ren
Topics & Concepts
Monocrystalline siliconMaterials scienceCrucible (geodemography)ImpuritySiliconCrystal (programming language)DopingMelt flow indexMicro-pulling-downPhosphorusRotation (mathematics)MetallurgyComposite materialOptoelectronicsChemistryGeometryComputational chemistryCopolymerProgramming languageOrganic chemistryComputer scienceMathematicsPolymerSilicon and Solar Cell TechnologiesThin-Film Transistor TechnologiesSolidification and crystal growth phenomena