Identifying Key Transport Mechanisms in Organic Antiambipolar Transistors
Chang‐Hyun Kim, Hocheon Yoo
Abstract
Abstract Antiambipolar current is an enabling feature for a wide range of unconventional devices. At the same time, it still remains as a new phenomenon without sufficiently deep understanding. This article sheds light on the principles of organic antiambipolar transistors (AATs) that exploit this fundamental phenomenon, focusing on the identification of their governing charge‐transport mechanisms. Variable‐temperature current–voltage measurements are employed as a key diagnosis tool, and a series of in‐depth physical analyses are provided to directly correlate the whole AAT with its sub‐component field‐effect transistors. The gate‐selective potential transition and drift over the depleted channel are found to be responsible for the uniquely shaped AAT switching curve, thus laying a foundation for systematic device engineering.