Atmospheric-Pressure Plasma-Enhanced Spatial ALD of SiO<sub>2</sub>Studied by Gas-Phase Infrared and Optical Emission Spectroscopy
M. A. Mione, Vincent Vandalon, Alfredo Mameli, W. M. M. Kessels, F. Roozeboom
Abstract
, our results demonstrate that infrared spectroscopy performed on exhaust gases is a valuable approach to quantify relevant process parameters, which can ultimately help evaluate and improve process performance.
Topics & Concepts
Infrared spectroscopyAnalytical Chemistry (journal)ChemistrySpectroscopyAtmospheric pressureAtomic layer depositionDesorptionAtmospheric-pressure plasmaDiethylamineInfraredPlasmaAdsorptionPhysical chemistryEnvironmental chemistryLayer (electronics)Organic chemistryPhysicsQuantum mechanicsOpticsOceanographyGeologySemiconductor materials and devicesCatalytic Processes in Materials ScienceElectronic and Structural Properties of Oxides