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Electrically active traps in 4H-silicon carbide (4H-SiC) PiN power diodes

P. Vigneshwara Raja, Christophe Raynaud, Besar Asllani, Hervé Morel, Dominique Planson

2023Journal of Materials Science Materials in Electronics10 citationsDOIOpen Access PDF

Topics & Concepts

Materials scienceSilicon carbideDiodeOptoelectronicsDeep-level transient spectroscopyEquivalent series resistancePIN diodeDopingSchottky diodeCapacitanceSiliconElectric fieldCurrent crowdingSchottky barrierVoltageCurrent (fluid)Electrical engineeringElectrodeComposite materialPhysical chemistryPhysicsQuantum mechanicsChemistryEngineeringSilicon Carbide Semiconductor TechnologiesSemiconductor materials and devicesSemiconductor materials and interfaces
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