Lifetime Modeling of the 4H-SiC MOS Interface in the HTRB Condition Under the Influence of Screw Dislocations
Edward Van Brunt, Daniel J. Lichtenwalner, J. H. Park, Satyaki Ganguly, J. W. McPherson
Abstract
This work explores the lifetime model and failure modes of the 4H-SiC MOS interface in the depletion mode. Unlike accumulation mode TDDB, shorter lifetime and a strong defect dependence are observed in the depletion mode. The 1/E model is found to be a good fit for the observed TDDB lifetime data. Despite having a shorter lifetime than accumulation mode, the modeled lifetimes are sufficient for application deployment.
Topics & Concepts
Materials scienceTime-dependent gate oxide breakdownMode (computer interface)Work (physics)Failure mode and effects analysisOptoelectronicsWide-bandgap semiconductorElectronic engineeringCondensed matter physicsElectrical engineeringComposite materialComputer scienceTransistorEngineeringPhysicsMechanical engineeringVoltageGate oxideOperating systemSilicon Carbide Semiconductor TechnologiesCopper Interconnects and ReliabilityElectromagnetic Compatibility and Noise Suppression