Mortise-tenon–shaped memristors for scientific computing
Weiqi Dang, Yu Shen, Wei Wei, Chen Pan, Fanqiang Chen, Gong-Jie Ruan, Yan Luo, Ying Guo, Qiuyang Tan, J. Shi, Xing-Jian Yangdong, Sicheng Chen, Cong Wang, Yongqin Xie, Zaizheng Yang, Pengfei Wang, Shuang Wang, Li Zhong, Shaobo Cheng, Chao Zhu, Bin Cheng, Shi‐Jun Liang, Feng Miao
Abstract
In-memory computing hardware based on memristors has emerged as a promising option for scientific computing due to its large-scale parallel data processing capability. However, the nonuniformity issue of the memristors renders the practical deployment of in-memory computing hardware complex, requiring peripheral circuits to ensure the accuracy of scientific computing, thereby resulting in increased power consumption. Here, we present a mortise-tenon–shaped (MTS) memristor with ultrahigh uniformity by introducing a mortise-shaped h-BN flake on the HfO 2 switching layer. The MTS memristor exhibits ultrasmall cycle-to-cycle (~2.5%) and device-to-device (~6.9%) variations compared to the HfO 2 memristor without the MTS structure. Furthermore, we use the MTS memristors to build a partial differential equation solver and demonstrate a convergence speed of solving the Poisson equation five times faster than the solver based on the traditional HfO 2 memristors. This work provides a promising approach for notably reducing the hardware resources required for fast and high-accuracy scientific computing.