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Performance enhancement of an ultra-scaled double-gate graphene nanoribbon tunnel field-effect transistor using channel doping engineering: Quantum simulation study

Khalil Tamersit

2020AEU - International Journal of Electronics and Communications38 citationsDOI

Topics & Concepts

Tunnel field-effect transistorQuantum tunnellingAmbipolar diffusionMaterials scienceBallistic limitTransistorDopingGrapheneBallistic conductionField-effect transistorQuantumOptoelectronicsElectronPhysicsNanotechnologyQuantum mechanicsVoltageProjectileMetallurgyGraphene research and applicationsAdvancements in Semiconductor Devices and Circuit DesignSemiconductor materials and devices
Performance enhancement of an ultra-scaled double-gate graphene nanoribbon tunnel field-effect transistor using channel doping engineering: Quantum simulation study | Litcius