MoS<sub>2</sub>-Thin Film Transistor Based Flexible 2T1C Driving Circuits for Active-Matrix Displays
Biying Huang, Yuchen Wang, Lu Li, Qinqin Wang, Yalin Peng, Xiuzhen Li, Yangkun Zhang, Luojun Du, Wei Yang, Dongxia Shi, Na Li, Guangyu Zhang
Abstract
Two-dimensional (2D) semiconductors offer great potential as high-performance materials for thin film transistors (TFTs) in displays. Their thin, stable, and flexible nature, along with excellent electrical properties, makes them suitable for flexible displays. However, previous demonstrations lacked clear superiority in pixel resolution and TFT performance. Here we present the flexible 2T1C pixel driving circuit for active-matrix displays based on high-quality large-scale monolayer MoS 2 . A gate-first fabrication process was developed for flexible MoS 2 -TFTs, showing a remarkable carrier mobility (average at 52.8 cm 2 V –1 s –1 ), high on/off ratio (average at 1.5 × 10 8 ), and negligible hysteresis. The driving current can be modulated by pulsed input voltages and demonstrates a stable and prompt response to both frequency and amplitude. We also demonstrated a 10 × 10 active-matrix with high resolution of 508 pixels per inch, exhibiting 100% yield and high uniformity. The driving circuit works well under bending up to ∼0.91% strain, highlighting its normal functions in flexible displays.