Enhanced photogalvanic effect in the two-dimensional MgCl2/ZnBr2 vertical heterojunction by inhomogenous tensile stress
Liyu Qian, Juan Zhao, Yiqun Xie
Abstract
The photogalvanic effect (PGE) occurring in noncentrosymmetric materials enables the generation of a dc photocurrent at zero bias with a high polarization sensitivity, which makes it very attractive in photodetection. However, the magnitude of the PGE photocurrent is usually small, leading to a low photoresponsivity, and therefore hampers its practical application in photodetection. Here, we propose an approach to largely enhancing the PGE photocurrent by applying an inhomogenous mechanical stretch, based on quantum transport simulations. We model a two-dimensional photodetector consisting of the wide-bandgap MgCl2/ZnBr2 vertical van der Waals heterojunction with the noncentrosymmetric C3v symmetry. Polarization-sensitive PGE photocurrent is generated under the vertical illumination of linearly polarized light. By applying inhomogenous mechanical stretch on the lattice, the photocurrent can be largely increased by up to 3 orders of magnitude due to the significantly increased device asymmetry. Our results propose an effective way to enhance the PGE by inhomogenous mechanical strain, showing the potential of the MgCl2/ZnBr2 vertical heterojunction in the low-power UV photodetection.