Materials properties and device applications of semiconducting bismuth oxyselenide
Menglu Li, Pei Chen, Yan Zhao, Mei Zhao, Huaqian Leng, Yong Wang, Sharafat Ali, Fazal Raziq, Xiaoqiang Wu, Jiabao Yi, Haiyan Xiao, Liang Qiao
Abstract
Abstract Layered two‐dimensional (2D) materials have garnered marvelous attention in diverse fields, including sensors, capacitors, nanocomposites and transistors, owing to their distinctive structural morphologies and superior physicochemical properties. Recently, layered quasi‐2D materials, especially layered bismuth oxyselenide (Bi 2 O 2 Se), are of particular interest, because of their different interlayer interactions from other layered 2D materials. On this basis, this material offers richer and more intriguing physics, including high electron mobility, sizeable bandgap, and remarkable thermal and chemical durability, rendering it an utterly prospective contender for use in advanced electronic and optoelectronic applications. Herein, this article reviews the recent advances related with Bi 2 O 2 Se. Initially, its structural characterization, band structure, and basic properties are briefly introduced. Further, the synthetic strategies for the preparation of Bi 2 O 2 Se are presented. Furthermore, the diverse applications of Bi 2 O 2 Se in the field of electronics and optoelectronics, photocatalytic, solar cells and sensing were summarized in detail. Ultimately, the challenges and future perspectives of Bi 2 O 2 Se are included. image