Vertically aligned MoS<sub>2</sub> films prepared by RF-magnetron sputtering method as electrocatalysts for hydrogen evolution reactions
Xueping Chen, Guangjian Xing, Linfeng Xu, Huiqin Lian, Yanyan Wang
Abstract
A series of 50 nm-thick molybdenum disulfide (MoS2) thin films with a nearly vertically aligned plate-like morphology were prepared by radio frequency (RF) magnetron sputtering method under Ar pressure of 4 Pa, 2 Pa, 0.8 Pa and 0.5 Pa. The vertical aligning is an ideal edge-terminated structure to expose most active sites, which results in a superior electrocatalytic hydrogen evolution reaction (HER) performance. The results of electrochemical measurements show that the MoS2 films prepared under 0.8 Pa exhibit best HER performance with a low onset overpotential of 149 mV. The vertically aligned MoS2 films prepared by RF-magnetron sputtering method are expected to be ideal alternative electrocatalysts for platinum (Pt).