Dependence of carrier escape lifetimes on quantum barrier thickness in InGaN/GaN multiple quantum well photodetectors
Yi Chao Chow, Changmin Lee, Matthew S. Wong, Yuh‐Renn Wu, Shuji Nakamura, Steven P. DenBaars, John E. Bowers, James S. Speck
Abstract
We reported significant improvements in device speed by reducing the quantum barrier (QB) thicknesses in the InGaN/GaN multiple quantum well (MQW) photodetectors (PDs). A 3-dB bandwidth of 700 MHz was achieved with a reverse bias of -6 V. Carrier escape lifetimes due to carrier trapping in the quantum wells (QWs) were obtained from both simulation and experimental fitting, identifying carrier trapping as the major speed limiting factor in the InGaN/GaN MQW PDs.
Topics & Concepts
PhotodetectorOptoelectronicsMaterials scienceTrappingQuantum wellQuantum efficiencyCarrier lifetimeLimitingOpticsQuantumPhysicsSiliconLaserEngineeringEcologyBiologyQuantum mechanicsMechanical engineeringGaN-based semiconductor devices and materialsSemiconductor Quantum Structures and DevicesGa2O3 and related materials