Improved Current Density and Contact Resistance in Bilayer MoSe<sub>2</sub> Field Effect Transistors by AlO<sub><i>x</i></sub> Capping
Divya Somvanshi, Emanuel Ber, Connor S. Bailey, Eric Pop, Eilam Yalon
Abstract
of ∼60 kΩ·μm. The weaker performance of 1L devices is due to their sensitivity to processing and ambient. Our results suggest that 2L (or few layers) is preferable to 1L for improved electronic properties in applications that do not require a direct band gap, which is a key finding for future two-dimensional electronics.
Topics & Concepts
Materials scienceContact resistanceTransistorMonolayerOptoelectronicsCurrent densityChemical vapor depositionField-effect transistorSemiconductorElectronicsBilayerBand gapNanotechnologyLayer (electronics)VoltageElectrical engineeringEngineeringBiologyQuantum mechanicsGeneticsPhysicsMembrane2D Materials and ApplicationsMXene and MAX Phase MaterialsGraphene research and applications