High Power and Narrow Vertical Divergence Laser Diodes With Photonic Crystal Structure
Zhonghao Chen, Aiyi Qi, Xuyan Zhou, Hongwei Qu, Jingxuan Chen, Yufei Jia, Wanhua Zheng
Abstract
High power and narrow vertical divergence lasers for the 980 nm wavelength range based on the photonic crystal (PC) structure are investigated. The structure of the PC layers and the position of the quantum well (QW) are optimized through mode analysis, which to maximize the output power of the PC laser. A broad area (BA) laser with <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$300~\mu $ </tex-math></inline-formula> m width and 4 mm cavity length yields 41.8 W output with far-field divergence angles of 16.5° in lateral and 16.8° in vertical at full width at half maximum (FWHM) under continuous-wave (CW) 48 A operating current at 5 °C.