Vertical <b> <i>β</i> </b>-Ga2O3 field plate Schottky barrier diode from metal-organic chemical vapor deposition
Esmat Farzana, Fikadu Alema, Wan Ying Ho, Akhil Mauze, Takeki Itoh, A. Osinsky, James S. Speck
Abstract
Vertical β-Ga2O3 Schottky diodes from metal-organic chemical vapor deposition (MOCVD)-grown epitaxial films are reported in this paper for high-power application devices. The Schottky diode, fabricated with a field termination structure, showed a low differential specific on-resistance of 0.67 mΩ cm2. Furthermore, the MOCVD-grown β-Ga2O3 vertical Schottky diodes exhibited a punch-through breakdown and a higher Baliga's figure-of-merit compared to those from other epitaxial growth methods of similar drift layer thickness. This suggests that the MOCVD growth, supporting high-quality epitaxy, can be promising for high-performance β-Ga2O3-based high-power devices.