Phase-Change Memory by GeSbTe Electrodeposition in Crossbar Arrays
Yasir J. Noori, Lingcong Meng, Ayoub H. Jaafar, Wenjian Zhang, Gabriela P. Kissling, Yisong Han, Nema Abdelazim, Mehrdad Alibouri, Kathleen LeBlanc, Nikolay Zhelev, Ruomeng Huang, Richard Beanland, David C. Smith, Gillian Reid, Kees de Groot, Philip N. Bartlett
Abstract
Phase-change memory is an emerging type of nonvolatile memory that shows a strong presence in the data-storage market. This technology has also recently attracted significant research interest in the development of non-Von Neumann computing architectures such as in-memory and neuromorphic computing. Research in these areas has been primarily motivated by the scalability potential of phase-change materials in crossbar architectures and their compatibility with industrial nanofabrication processes. In this work, we have developed crossbar phase-change memory arrays through the electrodeposition of GeSbTe (GST). We show that GST can be electrodeposited in nanofabricated TiN crossbar arrays using a scalable process. Various characterization techniques, such as atomic force microscopy (AFM), transmission electron microscopy (TEM), and energy-dispersive X-ray (EDX) were used to study electrodeposited materials in these arrays. Phase-switching tests of electrodeposited materials have shown a resistance switching ratio of 2 orders of magnitude with an endurance of around 80 cycles. Demonstrating crossbar phase-change memories via electrodeposition paves the way toward using this technique for developing scalable memory arrays involving electrodeposited materials for passive selectors and phase-switching devices.