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Progress toward a capacitively mediated CNOT between two charge qubits in Si/SiGe

E. R. MacQuarrie, Samuel F. Neyens, J. P. Dodson, J. Corrigan, Brandur Thorgrimsson, Nathan Holman, M. Palma, L. F. Edge, Mark Friesen, S. N. Coppersmith, M. A. Eriksson

2020npj Quantum Information32 citationsDOIOpen Access PDF

Abstract

Abstract Fast operations, an easily tunable Hamiltonian, and a straightforward two-qubit interaction make charge qubits a useful tool for benchmarking device performance and exploring two-qubit dynamics. Here, we tune a linear chain of four Si/SiGe quantum dots to host two double dot charge qubits. Using the capacitance between the double dots to mediate a strong two-qubit interaction, we simultaneously drive coherent transitions to generate correlations between the qubits. We then sequentially pulse the qubits to drive one qubit conditionally on the state of the other. We find that a conditional π -rotation can be driven in just 74 ps with a modest fidelity demonstrating the possibility of two-qubit operations with a 13.5 GHz clockspeed.

Topics & Concepts

QubitCharge qubitPhysicsControlled NOT gateQuantum mechanicsFlux qubitQuantum computerHamiltonian (control theory)Charge (physics)FidelityCluster stateSuperconducting quantum computingTopology (electrical circuits)Phase qubitQuantum gateQuantumComputer scienceElectrical engineeringMathematicsTelecommunicationsEngineeringMathematical optimizationQuantum and electron transport phenomenaAdvancements in Semiconductor Devices and Circuit DesignSemiconductor materials and devices
Progress toward a capacitively mediated CNOT between two charge qubits in Si/SiGe | Litcius