Unveiling the Different Physical Origins of Magnetic Anisotropy and Magnetoelasticity in Ga-Rich FeGa Thin Films
Pablo García Bartolomé, Adrián Begué, Álvaro Muñoz‐Noval, M. Ciria, R. Ranchal
Abstract
The aim of this work is to clarify how in-plane magnetic anisotropy and magnetoelasticity depend on the thickness of Ga-rich FeGa layers. Samples with an Fe72Ga28 composition were grown by sputtering in the ballistic regime in oblique incidence. Although for these growth conditions uniaxial magnetic anisotropy could be expected, in-plane anisotropy is only present when the sample thickness is above 100 nm. By means of differential X-ray absorption spectroscopy, we have determined the influence of both Ga pairs and tetragonal cell distortion on the evolution of the magnetic anisotropy with the increase of FeGa thickness. On the other hand, we have used the cantilever beam technique with capacitive detection to also determine the evolution of the magnetoelastic parameters with the thickness increase. In this case, experimental results can be understood considering the grain distribution. Therefore, the different physical origins for anisotropy and magnetoelasticity open up the possibility to independently tune these two characteristics in Ga-rich FeGa films.