Litcius/Paper detail

Alternatives to aluminum gates for silicon quantum devices: defects and strain.

Ryan M Stein, Z S Barcikowski, S J Pookpanratana, J M Pomeroy, M D Stewart

2021PubMed48 citationsDOIOpen Access PDF

Abstract

larger than the bulk value. These results indicate that there is a tradeoff between minimizing defects and minimizing the impact of strain in quantum device fabrication.

Topics & Concepts

QubitQuantum computerSpin engineeringPhysicsQuantum dotPauli exclusion principleSpin (aerodynamics)Quantum gateSpin transistorCondensed matter physicsOptoelectronicsQuantumQuantum mechanicsSpin polarizationElectronThermodynamicsQuantum and electron transport phenomenaAdvancements in Semiconductor Devices and Circuit DesignSemiconductor materials and devices
Alternatives to aluminum gates for silicon quantum devices: defects and strain. | Litcius