Perovskite Flash Memory with a Single-Layer Nanofloating Gate
Maria Vasilopoulou, Byung Soon Kim, Hyeong Pil Kim, Wilson José da Silva, Fábio Kurt Schneider, Mohd Asri Mat Teridi, Peng Gao, Abd. Rashid bin Mohd Yusoff, Mohammad Khaja Nazeeruddin
Abstract
Here we use triple-cation metal–organic halide perovskite single crystals for the transistor channel of a flash memory device. Moreover, we design and demonstrate a 10 nm thick single-layer nanofloating gate. It consists of a ternary blend of two organic semiconductors, a p-type polyfluorene and an n-type fullerene that form a donor:acceptor interpenetrating network that serves as the charge storage unit, and of an insulating polystyrene that acts as the tunneling dielectric. Under such a framework, we realize the first non-volatile flash memory transistor based on a perovskite channel. This simplified, solution-processed perovskite flash memory displays unique performance metrics such as a large memory window of 30 V, an on/off ratio of 9 × 107, short write/erase times of 50 ms, and a satisfactory retention time exceeding 106 s. The realization of the first flash memory transistor using a single-crystal perovskite channel could be a valuable direction for perovskite electronics research.