On-chip ytterbium-doped lithium niobate microdisk lasers with high conversion efficiency
Qiang Luo, Yang Chen, Zhenzhong Hao, Ru Zhang, Rui Ma, Dahuai Zheng, Hongde Liu, Xuanyi Yu, Feng Gao, Bo Fang, Yongfa Kong, Guoquan Zhang, Jingjun Xu
Abstract
Integrated optical systems based on lithium niobate on insulator (LNOI) have attracted the interest of researchers. Recently, erbium-doped LNOI lasers have been realized. However, the reported lasers have a relatively lower conversion efficiency and only operate in the 1550 nm band. In this paper, we demonstrate an LNOI laser operating in the 1060 nm band based on a high Q factor ytterbium-doped LNOI microdisk cavity. The threshold and the conversion efficiency of the laser are 21.19 µW and 1.36%, respectively. To our knowledge, the conversion efficiency is the highest among the reported rare-earth-doped LNOI lasers. This research extends the operating band of LNOI lasers and shows the potential in realizing high-power LNOI lasers.