Quantum Sensing of Spin Fluctuations of Magnetic Insulator Films with Perpendicular Anisotropy
Eric Lee-Wong, Jinjun Ding, Xiaoche Wang, Chuan‐Pu Liu, Nathan J. McLaughlin, Hailong Wang, Mingzhong Wu, Chunhui Du
Abstract
Nitrogen-vacancy (N-V) centers, optically active atomic defects in diamond, have been widely applied to emerging quantum sensing, imaging, and network efforts, showing unprecedented field sensitivity and nanoscale spatial resolution. Many of these advantages derive from their excellent quantum-coherence, single-spin addressability, and remarkable functionality over a broad temperature range, enabling opportunities to outperform their classical counterparts. To date, N-V measurements of spin fluctuations have mainly focused on systems with in-plane magnetization, but applications to material systems with a spontaneous out-of-plane magnetization remain largely unexplored despite their technological importance. Here, we report N-V sensing of intrinsic spin fluctuations of magnetic insulator ${\mathrm{Y}}_{3}{\mathrm{Fe}}_{5}{\mathrm{O}}_{12}$ thin films with perpendicular magnetic anisotropy. The measured field dependence of N-V relaxation rates is well correlated to the variation of magnon density and band structure of the magnetic samples, which are challenging to access by the conventional magnetometry methods. Our results highlight the significant opportunities offered by N-V centers in diagnosing the noise environment of functional magnetic elements, providing valuable information to develop next-generation, high-density, and scalable spintronic devices.