Edge Modified Stanene Nanoribbons for Potential Nanointerconnects

Abstract

For the theoretical investigation of stanene nanoribbons (SnNRs) as metal interconnect, first principles calculations are carried out using density functional theory (DFT). The structural, electronic, and transport characteristics of SnNRs with hydrogen/fluorine (H/F) edge passivations are evaluated. Computations of the binding energy ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$E_{b}$</tex-math></inline-formula> ) and formation energy ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$E_{forn}$</tex-math></inline-formula> ) show that fluorination enhances the thermodynamic stability of SnNRs. The considered SnNRs are observed to be metallic from the bandstructure and density of states computations. Owing to the metallicity, SnNRs are proposed for nanoscale metal interconnect applications. For the quantum transport computations, the non-equilibrium Green's function (NEGF) formalism is used. Current-voltage ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$I$</tex-math></inline-formula> - <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$V$</tex-math></inline-formula> ) characteristics are linear for both edge hydrogenated (H-SnNR-H) and both edge fluorinated (F-SnNR-F) SnNRs. Typical parasitic parameters that influence the nanoscale interconnect performance such as quantum resistance ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$R_{Q}$</tex-math></inline-formula> ), quantum capacitance ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$C_{Q}$</tex-math></inline-formula> ), and kinetic inductance ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$L_{K}$</tex-math></inline-formula> ) are evaluated. Further, the small scale driver-interconnect-load (DIL) circuit model of the SnNR nanoribbons is considered to evaluate the interconnect performance. Performance metrics such as delay ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$\tau _{delay}$</tex-math></inline-formula> ), power delay product ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$PDP$</tex-math></inline-formula> ), stability, frequency response analysis, and crosstalk effect are evaluated for H-SnNR-H and F-SnNR-F interconnects. Thus, the obtained findings suggest that SnNRs can be considered as promising candidates for nanoscale metal interconnect applications.

Topics & Concepts