4D-STEM at interfaces to GaN: Centre-of-mass approach & NBED-disc detection
Tim Grieb, Florian F. Krause, Knut Müller‐Caspary, Robert A. Ritz, Martin Simson, Jörg Schörmann, Christoph Mahr, Jan Müßener, Marco Schowalter, H. Soltau, Martin Eickhoff, Andreas Rosenauer
Topics & Concepts
Materials scienceOptoelectronicsChemistryPhysicsAdvanced Electron Microscopy Techniques and ApplicationsElectron and X-Ray Spectroscopy TechniquesGaN-based semiconductor devices and materials