Highly Efficient Near‐Infrared Electrofluorescence from a Thermally Activated Delayed Fluorescence Molecule
Umamahesh Balijapalli, Ryo Nagata, Nishiki Yamada, Hajime Nakanotani, Masaki Tanaka, Anthony D’Aléo, Virginie Placide, Masashi Mamada, Youichi Tsuchiya, Chihaya Adachi
Abstract
Abstract Near‐IR organic light‐emitting diodes (NIR‐OLEDs) are potential light‐sources for various sensing applications as OLEDs have unique features such as ultra‐flexibility and low‐cost fabrication. However, the low external electroluminescence (EL) quantum efficiency (EQE) of NIR‐OLEDs is a critical obstacle for potential applications. Here, we demonstrate a highly efficient NIR emitter with thermally activated delayed fluorescence (TADF) and its application to NIR‐OLEDs. The NIR‐TADF emitter, TPA‐PZTCN, has a high photoluminescence quantum yield of over 40 % with a peak wavelength at 729 nm even in a highly doped co‐deposited film. The EL peak wavelength of the NIR‐OLED is 734 nm with an EQE of 13.4 %, unprecedented among rare‐metal‐free NIR‐OLEDs in this spectral range. TPA‐PZTCN can sensitize a deeper NIR fluorophore to achieve a peak wavelength of approximately 900 nm, resulting in an EQE of over 1 % in a TADF‐sensitized NIR‐OLED with high operational device durability (LT 95 >600 h.).