Gate-switching-stress test: Electrical parameter stability of SiC MOSFETs in switching operation
Paul Salmen, Maximilian W. Feil, Katja Waschneck, H. Reisinger, Gerald Rescher, I. Voss, Markus Sievers, Thomas Aichinger
Topics & Concepts
MOSFETFast switchingMaterials scienceStress (linguistics)Stability (learning theory)Silicon carbideSwitching timeElectronic engineeringOptoelectronicsElectrical engineeringEngineeringComputer scienceTransistorVoltageComposite materialMachine learningPhilosophyLinguisticsSilicon Carbide Semiconductor TechnologiesSemiconductor materials and devicesAdvancements in Semiconductor Devices and Circuit Design