Solvent-assisted sulfur vacancy engineering method in MoS<sub>2</sub> for a neuromorphic synaptic memristor
Jiyeon Kim, Changik Im, Chan Lee, Jinwoo Hwang, Hyoik Jang, Jae‐Hak Lee, Minho Jin, Haeyeon Lee, Junyoung Kim, Junho Sung, Youn Sang Kim, Eunho Lee
Abstract
Novel solvent-assisted vacancy engineering (SAVE) is proposed for S vacancy generation in MoS 2 , considering the solubility and polarity of the solvent. The SAVE-treated MoS 2 synaptic memristor shows non-volatile memory characteristics and synaptic behavior.
Topics & Concepts
Molybdenum disulfideVacancy defectChalcogenideSulfurRaman spectroscopyMaterials scienceX-ray photoelectron spectroscopyNanotechnologyChemical physicsOptoelectronicsChemistryChemical engineeringPhysicsCrystallographyEngineeringMetallurgyOpticsAdvanced Memory and Neural ComputingPerovskite Materials and ApplicationsTransition Metal Oxide Nanomaterials