Self-limiting stoichiometry in SnSe thin films
J Chin, Marshall B. Frye, Derrick Liu, Maria Hilse, Ian C. Graham, Jeffrey R. Shallenberger, Ke Wang, Roman Engel‐Herbert, Mengyi Wang, Yun Kyung Shin, Nadire Nayir, Adri C. T. van Duin, Lauren M. Garten
Abstract
was found to increase the lateral scale of the SnSe layers. Overall, self-limiting stoichiometry provides a promising avenue for maintaining growth of large lateral-scale SnSe for device fabrication.
Topics & Concepts
StoichiometryMaterials sciencevan der Waals forceRaman spectroscopyMonolayerX-ray photoelectron spectroscopyThin filmReaxFFTransmission electron microscopyCrystallographyNanotechnologyChemical physicsChemical engineeringMolecular dynamicsChemistryMoleculePhysical chemistryComputational chemistryOpticsInteratomic potentialEngineeringPhysicsOrganic chemistry2D Materials and ApplicationsPerovskite Materials and ApplicationsQuantum Dots Synthesis And Properties